The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Oct. 19, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ying Huang, Wuhan, CN;

Hongtao Liu, Wuhan, CN;

Feng Xu, Wuhan, CN;

Wenzhe Wei, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 11/5642 (2013.01); G11C 11/5671 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01);
Abstract

An operating method and a non-volatile memory device are provided. The non-volatile memory device includes a memory array including a plurality of memory cells. The operating method includes applying a first program voltage signal to selected word lines connected to selected memory cells during a first program period and measuring a first threshold voltage, applying a second program voltage signal to the selected word lines during a second program period and measuring a second threshold voltage, applying a test bit line voltage signal to selected bit lines and applying a third program voltage signal to the selected word lines during a third program period and measuring a third threshold voltage and determining the enhanced bit line voltage by comparing a difference between the third threshold voltage and the second threshold voltage with a difference between the second threshold voltage and the first threshold voltage.


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