The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 01, 2022

Filed:

Apr. 28, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Che-Yuan Chang, Hsinchu, TW;

Chih-Chiang Tu, Taoyuan, TW;

Ming-Ho Tsai, Hsinchu, TW;

Ching-Hung Lai, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); G03F 1/36 (2012.01); G03F 1/70 (2012.01); G03F 1/82 (2012.01);
U.S. Cl.
CPC ...
G03F 7/2004 (2013.01); G03F 1/36 (2013.01); G03F 1/70 (2013.01); G03F 1/82 (2013.01); G03F 7/2002 (2013.01);
Abstract

A photomask includes a transparent substrate and a shielding pattern disposed on the transparent substrate. The shielding pattern includes shielding island structures. The shielding island structures are separated from and spaced apart from one another by dividing lanes. The dividing lanes expose the underlying transparent substrate. The photomask is configured for a light of a wavelength, and the dividing lanes reduce or hinder a transmission of the light of the wavelength.


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Chang, Che-Yuan. (2022). Photomask, photolithography system and manufacturing process (U.S. Patent No. 11262658). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11262658

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