The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Dec. 31, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chia-Hua Lin, Hsinchu, TW;
Yao-Wen Chang, Taipei, TW;
Chii-Ming Wu, Hsinchu County, TW;
Cheng-Yuan Tsai, Hsin-Chu County, TW;
Eugene I-Chun Chen, Taipei, TW;
Tzu-Chung Tsai, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure is provided. The semiconductor structure includes metallization structure, a plurality of conductive pads, and a dielectric layer. The plurality of conductive pads is over the metallization structure. The dielectric layer is on the metallization structure and covers the conductive pad. The dielectric layer includes a first dielectric film, a second dielectric film, and a third dielectric film. The first dielectric film is on the conductive pad. The second dielectric film is on the first dielectric film. The third dielectric film is on the second dielectric film. The a refractive index of the first dielectric film is smaller than a refractive index of the second dielectric film, and the refractive index of the second dielectric film is smaller than a refractive index of the third dielectric film.