The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2022
Filed:
Jun. 12, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Ta-Chun Ma, New Taipei, TW;
Yee-Chia Yeo, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method for forming a fin field effect transistor device structure includes forming a fin structure over a substrate. The method also includes forming an isolation structure surrounding the fin structure. The method also includes cleaning sidewalls of the fin structure. The method also includes depositing a silicon cap layer over the fin structure. The method also includes growing an oxide layer over the silicon cap layer. The silicon cap layer is thinned after growing an oxide layer over the silicon cap layer. The method also includes forming a gate structure over the oxide layer across the fin structure. The method also includes growing a source/drain epitaxial structure beside the gate structure. The method also includes forming a contact structure electrically connected to the gate structure.