The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Aug. 16, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Toshiyuki Maenosono, Higashihiroshima, JP;

Yuta Kikuchi, Higashihiroshima, JP;

Manabu Ito, Higashihiroshima, JP;

Yoshihiro Saeki, Fuchu, JP;

Assignee:

MICRON TECHNOLOGY, INC., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/498 (2006.01); H01L 23/538 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49827 (2013.01); H01L 21/76804 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 21/76898 (2013.01); H01L 23/49838 (2013.01); H01L 23/49894 (2013.01); H01L 23/5383 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 23/5384 (2013.01); H01L 24/16 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/11002 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1161 (2013.01); H01L 2224/1181 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/11616 (2013.01); H01L 2224/11622 (2013.01); H01L 2224/13007 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/13025 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/14051 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/81193 (2013.01);
Abstract

Apparatuses and methods using a silicon on insulator (SOI) substrate are described. An example apparatus includes: a substrate including a first surface and a second surface opposite to the first surface; a circuit formed in the first surface; a first electrode through the substrate from the first surface to the second surface; and a first insulative film around the first electrode. The first electrode includes: a first portion formed in the substrate; and a second portion continuous to the first portion and protruding from the second surface. The first insulative film is formed between the first portion of the first electrode in the substrate and extending to a side surface of the second portion of the first electrode.


Find Patent Forward Citations

Loading…