The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 22, 2022

Filed:

Dec. 21, 2016
Applicants:

Mattson Technology, Inc., Fremont, CA (US);

Beijing E-town Semiconductor Technology Co., Ltd., Beijing, CN;

Inventors:

Christian Pfahler, Ulm, DE;

Joseph Cibere, Burnaby, CA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
F27B 17/00 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01J 37/22 (2006.01);
U.S. Cl.
CPC ...
F27B 17/0025 (2013.01); H01J 37/32055 (2013.01); H01L 21/6719 (2013.01); H01L 21/67109 (2013.01); H01L 21/67115 (2013.01); H01L 21/67248 (2013.01); H01J 37/226 (2013.01); H01J 37/3244 (2013.01); H01J 37/32522 (2013.01);
Abstract

Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate.


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