The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Jun. 01, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Ming-Hsien Tsai, Hsinchu, TW;

Shang-Ying Tsai, Pingzhen, TW;

Fu-Lung Hsueh, Kaohsiung, TW;

Shih-Ming Yang, Tainan, TW;

Jheng-Yuan Wang, Taichung, TW;

Ming-De Chen, Taichung, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 35/32 (2006.01); H01L 35/34 (2006.01); H01L 35/04 (2006.01); H01L 35/22 (2006.01);
U.S. Cl.
CPC ...
H01L 35/32 (2013.01); H01L 35/04 (2013.01); H01L 35/22 (2013.01); H01L 35/34 (2013.01);
Abstract

A semiconductor device and method of making same are disclosed. In some embodiments, a method includes: forming a first thermoelectric conduction leg on a substrate; forming a second thermoelectric conduction leg on the substrate to be aligned with the first thermoelectric conduction leg along a same row; forming at least one intermediate thermoelectric conduction structure on an end of the second thermoelectric conduction leg; forming a contact structure to couple the first and second thermoelectric conduction legs via the at least one intermediate thermoelectric conduction structure; and recessing the substrate to form at least one trench substantially adjacent to a respective side edge of either the first thermoelectric conduction leg or the second thermoelectric conduction leg.


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