The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 15, 2022

Filed:

Mar. 17, 2020
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Tsung-Sheng Kang, Ballston Lake, NY (US);

Tao Li, Albany, NY (US);

Ardasheir Rahman, Schenectady, NY (US);

Praveen Joseph, White Plains, NY (US);

Indira Seshadri, Niskayuna, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/02238 (2013.01); H01L 21/02255 (2013.01); H01L 21/823807 (2013.01); H01L 21/823885 (2013.01); H01L 27/1207 (2013.01); H01L 29/0676 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract

A semiconductor structure includes a first semiconducting channel having a plurality of vertical nanowires and a second semiconducting channel having a plurality of vertical nanowires. The first semiconducting channel and the second semiconducting channel are configured to be in a stacked configuration. The plurality of vertical nanowires of the first semiconducting channel are configured to be in alternating positions relative to the plurality of vertical nanowires of the second semiconducting channel.


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