The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Jul. 31, 2018
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/82 (2006.01); H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 29/66 (2006.01); H01L 21/033 (2006.01); H01L 21/32 (2006.01); H01L 27/088 (2006.01); H01L 21/84 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0332 (2013.01); H01L 21/0338 (2013.01); H01L 21/31144 (2013.01); H01L 21/32 (2013.01); H01L 21/32139 (2013.01); H01L 21/823437 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/66545 (2013.01); H01L 21/845 (2013.01); H01L 27/0207 (2013.01); H01L 29/7848 (2013.01);
Abstract
A semiconductor structure includes a first fin, a second fin, a first gate, a second gate, at least one spacer, and an insulating structure. The first gate is present on the first fin. The second gate is present on the second fin. The spacer is present on at least one side wall of at least one of the first gate and the second gate. The insulating structure is present between the first fin and the second fin, in which the spacer is substantially absent between the insulating structure and said at least one of the first gate and the second gate.