The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2022
Filed:
Aug. 19, 2019
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yu-Der Chih, Hsinchu, TW;
Chia-Fu Lee, Hsinchu, TW;
Yi-Chun Shih, Hsinchu, TW;
Hon-Jarn Lin, Hsinchu, TW;
Ku-Feng Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for sensing logical states of memory cells in multiple segments in a memory device, each cell having a high- and low-resistance state, resulting in different cell current levels for the different resistance states. The method includes determining target reference current levels for the respective segments, at least two of the target reference current levels being different from each other; generating a reference current for each segment with the target reference current level for that segment; comparing the cell current level for each cell to the reference current level for the segment the cell is in; and determining the logical states of the memory cells based on the comparison.