The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Apr. 25, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Kuei-Ming Chang, New Taipei, TW;
Ta-Chun Lin, Hsinchu, TW;
Rei-Jay Hsieh, Miaoli County, TW;
Yung-Chih Wang, Hsinchu, TW;
Wen-Huei Guo, Hsinchu County, TW;
Kuo-Hua Pan, Hsinchu, TW;
Buo-Chin Hsu, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, first and second source/drain features, and a dielectric plug. The substrate has a semiconductor fin. The first and second source/drain features are over first and second portions of the semiconductor fin, respectively. The dielectric plug is at least partially embedded in a third portion of the semiconductor fin. The third portion is in between the first and second portions of the semiconductor fin. The dielectric plug includes a first dielectric material and a second dielectric material different from the first dielectric material.