The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Jul. 13, 2020
Micron Technology, Inc., Boise, ID (US);
Kamal M. Karda, Boise, ID (US);
Qian Tao, Boise, ID (US);
Durai Vishak Nirmal Ramaswamy, Boise, ID (US);
Haitao Liu, Boise, ID (US);
Kirk D. Prall, Boise, ID (US);
Ashonita Chavan, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory cell includes a select device and a capacitor electrically coupled in series with the select device. The capacitor includes two conductive capacitor electrodes having ferroelectric material there-between. The capacitor has an intrinsic current leakage path from one of the capacitor electrodes to the other through the ferroelectric material. There is a parallel current leakage path from the one capacitor electrode to the other. The parallel current leakage path is circuit-parallel the intrinsic path and of lower total resistance than the intrinsic path. Other aspects are disclosed.