The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2022
Filed:
Jun. 08, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Dong-Yo Jheng, Hsinchu, TW;
Ken-Hsien Hsieh, Taipei, TW;
Shih-Ming Chang, Hsinchu, TW;
Chih-Jie Lee, Hsinchu, TW;
Shuo-Yen Chou, Hualien County, TW;
Ru-Gun Liu, Hsinchu County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method includes receiving a layout that includes a shape to be formed on a photomask and determining a plurality of target lithographic contours for the shape, wherein the plurality of target lithographic contours includes a first target lithographic contour for a first set of process conditions and a second target lithographic contour for a second set of process conditions, performing a lithographic simulation of the layout to produce a first simulated contour at the first set of process conditions and a second simulated contour at the second set of process conditions, determining a first edge placement error between the first simulated contour and the first target lithographic contour and a second edge placement error between the second simulated contour and the second target lithographic contour, and determining a modification to the layout based on the first edge placement error and the second edge placement error.