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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11239342 B1

PDFFull Text
Date of Patent:
Feb. 01, 2022

Filed:

Jun. 28, 2018

Vertical transistors having improved control of top source or drain junctions

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Kangguo Cheng, Schenectady, NY (US);

Ruilong Xie, Schenectady, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Chun-chen Yeh, Danbury, CT (US);

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Joseph Petrokaitis

Primary Examiner:

Ajay Arora

Assistant Examiner:

Laura M Dykes

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/225 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 21/324 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66666 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/2254 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/6656 (2013.01); H01L 29/7827 (2013.01); H01L 21/324 (2013.01); H01L 21/3212 (2013.01);
Abstract

Embodiments of the invention are directed to a method of forming a semiconductor device. A non-limiting example of the method includes forming a channel fin over a substrate and forming a top spacer region around a top portion of the channel fin, wherein the top spacer region includes a dopant. A dopant drive-in process is applied, wherein the dopant drive-in process is configured to drive the dopant from the top spacer region into the top portion of the channel fin to create a doped top portion of the channel fin and a top junction between the doped top portion of the channel fin and a main body portion of the channel fin.

Find Patent Forward Citations

Cheng, Kangguo. (2022). Vertical transistors having improved control of top source or drain junctions (U.S. Patent No. 11239342). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11239342

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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