The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Oct. 15, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tsmc Nanjing Company Limited, Nanjing, CN;
Tsmc China Company Limited, Shanghai, CN;
Tian-Yu Xie, Shanghai, CN;
Xin-Yong Wang, Shanghai, CN;
Lei Pan, Shanghai, CN;
Kuo-Ji Chen, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
TSMC NANJING COMPANY LIMITED, Nanjing, CN;
TSMC CHINA COMPANY LIMITED, Shanghai, CN;
Abstract
An IC structure includes first and second transistors, an isolation region and a first gate extension. The first transistor includes a first gate and first source/drain regions respectively on opposite sides of the first gate. The second transistor includes a second gate and second source/drain regions respectively on opposite sides of the second gate. The isolation region is laterally between the first and second transistors. A first one of the first source/drain regions has a first source/drain extension protruding from a first boundary of the isolation region, and a first one of the second source/drain regions has a second source/drain extension protruding from a second boundary of the isolation region. The first gate extension extends from the first gate to a position overlapping the isolation region.