The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Sep. 26, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Pin-Hong Chen, Tainan, TW;
Yi-Wei Chen, Taichung, TW;
Chih-Chieh Tsai, Kaohsiung, TW;
Tzu-Chieh Chen, Pingtung County, TW;
Tsun-Min Cheng, Changhua County, TW;
Chi-Mao Hsu, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Fujian Jinhua Integrated Circuit Co., Ltd., Quanzhou, CN;
Abstract
A fabricating method of a semiconductive element includes providing a substrate, wherein an amorphous silicon layer covers the substrate. Then, a titanium nitride layer is provided to cover and contact the amorphous silicon layer. Later, a titanium layer is formed to cover the titanium nitride layer. Finally, a thermal process is performed to transform the titanium nitride layer into a nitrogen-containing titanium silicide layer.