The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Dec. 26, 2018
Applicant:
Siliconware Precision Industries Co., Ltd., Taichung, TW;
Inventors:
Hsien-Lung Hsiao, Taichung, TW;
Yu-Cheng Pai, Taichung, TW;
Chia-Chi Lo, Taichung, TW;
Szu-Hsien Chen, Taichung, TW;
Shu-Chi Chang, Taichung, TW;
Assignee:
Siliconware Precision Industries Co., Ltd., Taichung, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/13 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01); H01L 23/60 (2006.01);
U.S. Cl.
CPC ...
H01L 23/13 (2013.01); H01L 23/49822 (2013.01); H01L 23/49838 (2013.01); H01L 23/60 (2013.01); H01L 24/94 (2013.01);
Abstract
A carrier structure includes: a plurality of substrates; a separation portion provided between the substrates; and a periphery portion provided at the periphery of the substrates and formed with at least one opening. With the configuration of the opening, the area of an insulating layer of the carrier structure can be reduced. Therefore, the overall space of electrostatic buildup in the carrier structure can also be reduced.