The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2022
Filed:
Sep. 27, 2019
International Business Machines Corporation, Armonk, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Heng Wu, Guilderland, NY (US);
Jay Strane, Warwick, NY (US);
Hemanth Jagannathan, Niskayuna, NY (US);
Lan Yu, Voorheesville, NY (US);
Tao Li, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a vertical channel semiconductor structure, comprises forming a source/drain layer in contact with at least one semiconductor fin. A first sacrificial layer is formed over the source/drain layer. A second sacrificial layer is formed over the first sacrificial layer. A trench is formed in the second sacrificial layer to expose a portion of the first sacrificial layer. After forming the second sacrificial layer, the first sacrificial layer is selectively removed to form a cavity under the second sacrificial layer. A spacer layer is then formed within the cavity.