The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Nov. 13, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chi-Chun Liu, Altamont, NY (US);

Nelson Felix, Slingerlands, NY (US);

Yann Mignot, Slingerlands, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

John Arnold, North Chatham, NY (US);

Allen Gabor, Katonah, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/033 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0335 (2013.01); H01L 21/0337 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/76897 (2013.01);
Abstract

A method for fabricating a semiconductor device includes forming a plurality of mandrel cuts from a first set of mandrels of a base structure using lithography, surrounding the first set of mandrels and a second set of mandrels of the base structure with spacer material to form mandrel-spacer structures, forming a flowable material layer on exposed surfaces of the mandrel-spacer structures, and performing additional processing, including forming a plurality of dielectric trenches within the base structure based on patterns formed in the flowable material layer.


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