The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

May. 29, 2018
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Te-Hsien Hsieh, Hsin-Chu, TW;

Lee-Chuan Tseng, New Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); C23C 14/46 (2006.01); C23C 14/56 (2006.01); B01D 21/00 (2006.01); H01L 21/3213 (2006.01); H01L 21/3065 (2006.01); H01L 21/3105 (2006.01); C23C 14/02 (2006.01); H01L 21/311 (2006.01); C23C 14/58 (2006.01); C23C 16/02 (2006.01); H01L 21/67 (2006.01); B01J 19/00 (2006.01); H01L 21/687 (2006.01); C23C 16/44 (2006.01); H01L 23/34 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32633 (2013.01); B01D 21/0042 (2013.01); B01J 19/006 (2013.01); C23C 14/022 (2013.01); C23C 14/46 (2013.01); C23C 14/5873 (2013.01); C23C 16/0245 (2013.01); H01J 37/32431 (2013.01); H01J 37/32449 (2013.01); H01J 37/32522 (2013.01); H01J 37/32715 (2013.01); H01J 37/32834 (2013.01); H01J 37/32871 (2013.01); H01L 21/3065 (2013.01); H01L 21/31056 (2013.01); H01L 21/31116 (2013.01); H01L 21/32136 (2013.01); H01L 21/6719 (2013.01); H01L 21/68785 (2013.01); B01J 2208/00938 (2013.01); B01J 2219/0869 (2013.01); C23C 14/564 (2013.01); C23C 16/4412 (2013.01); H01J 2237/022 (2013.01); H01J 2237/334 (2013.01); H01L 23/34 (2013.01); H01L 2224/75501 (2013.01);
Abstract

In some embodiments, the present disclosure relates to an ion beam etching apparatus. The ion beam etching apparatus includes a substrate holder disposed within a processing chamber and a plasma source in communication with the processing chamber. A vacuum pump is coupled to the processing chamber by way of an inlet. One or more baffles are arranged between the substrate holder and a lower surface of the processing chamber. A by-product redistributor is configured to move a by-product from an etching process from outside of the one or more baffles to directly below the one or more baffles.


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