The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 18, 2022

Filed:

Feb. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jian-Jou Lian, Tainan, TW;

Chun-Neng Lin, Hsinchu County, TW;

Ming-Hsi Yeh, Hsinchu, TW;

Chieh-Wei Chen, Taoyuan, TW;

Tzu-Ang Chiang, I-lan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 21/845 (2013.01); H01L 29/7854 (2013.01);
Abstract

A method of forming a semiconductor device includes removing a dummy gate from over a semiconductor fin; depositing a glue layer and a fill metal over the semiconductor fin; and simultaneously etching the glue layer and the fill metal with a wet etching solution, the wet etching solution etching the glue layer at a faster rate than the fill metal and reshaping the fill metal.


Find Patent Forward Citations

Lian, Jian-Jou. (2022). Fin field-effect transistor device and method of forming the same (U.S. Patent No. 11227940). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11227940

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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