IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11227862 B1

PDFFull Text
Date of Patent:
Jan. 18, 2022

Filed:

Jul. 06, 2020

Semiconductor device

Applicant:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Inventors:

Kenji Sasaki, Nagaokakyo, JP;

Takayuki Tsutsui, Nagaokakyo, JP;

Isao Obu, Nagaokakyo, JP;

Yasuhisa Yamamoto, Nagaokakyo, JP;

Assignee:

Murata Manufacturing Co., Ltd., Kyoto-fu, JP;

Attorney:

Studebaker & Brackett PC

Primary Examiner:

Nathan W Ha

Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 23/00 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H03F 1/52 (2006.01); H03F 3/195 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/737 (2006.01); H03F 3/213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/17 (2013.01); H01L 24/49 (2013.01); H01L 29/0692 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/41708 (2013.01); H01L 29/42304 (2013.01); H01L 29/7371 (2013.01); H01L 29/8613 (2013.01); H03F 1/52 (2013.01); H03F 3/195 (2013.01); H03F 3/213 (2013.01); H01L 24/13 (2013.01); H01L 24/48 (2013.01); H01L 2224/02166 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13101 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/48463 (2013.01); H01L 2924/00014 (2013.01); H03F 2200/444 (2013.01);
Abstract

An amplifier circuit including a semiconductor element is formed on a substrate. A protection circuit is formed including a plurality of protection diodes that are formed on the substrate and that are connected in series with each other, the protection circuit being connected to an output terminal of the amplifier circuit. A pad conductive layer is formed that at least partially includes a pad for connecting to a circuit outside the substrate. An insulating protective film covers the pad conductive layer. The insulating protective film includes an opening that exposes a partial area of a surface of the pad conductive layer, and that covers another area. A first bump is formed on the pad conductive layer on a bottom surface of the opening, and a second bump at least partially overlaps the protection circuit in plan view and is connected to a ground (GND) potential connected to the amplifier circuit.

Find Patent Forward Citations

Loading…