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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11227861 B1

PDFFull Text
Date of Patent:
Jan. 18, 2022

Filed:

Dec. 17, 2020

Integrated assemblies comprising sense-amplifier-circuitry and wordline-driver-circuitry under memory cells of a memory array

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hiroki Fujisawa, Kanagawa, JP;

Charles L. Ingalls, Meridian, ID (US);

Richard J. Hill, Boise, ID (US);

Gurtej S. Sandhu, Boise, ID (US);

Scott J. Derner, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

Han Yang

Int. Cl.
CPC ...
G11C 11/40 (2006.01); H01L 25/18 (2006.01); G11C 11/4091 (2006.01); H01L 23/528 (2006.01); H01L 27/108 (2006.01); G11C 11/408 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 25/18 (2013.01); G11C 11/4085 (2013.01); G11C 11/4091 (2013.01); H01L 23/528 (2013.01); H01L 27/10817 (2013.01); H01L 27/10897 (2013.01); H01L 29/7827 (2013.01);
Abstract

Some embodiments include an integrated assembly having a base comprising sense-amplifier-circuitry, a first deck over the base, and a second deck over the first deck. The first deck includes a first portion of a first array of first memory cells, and includes a first portion of a second array of second memory cells. The second deck includes a second portion of the first array of the first memory cells, and includes a second portion of the second array of the second memory cells. A first digit line is associated with the first array, and a second digit line is associated with the second array. The first and second digit lines are comparatively coupled with one another through the sense-amplifier-circuitry.

Find Patent Forward Citations

Fujisawa, Hiroki. (2022). Integrated assemblies comprising sense-amplifier-circuitry and wordline-driver-circuitry under memory cells of a memory array (U.S. Patent No. 11227861). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11227861

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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