The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2022
Filed:
Oct. 04, 2019
Applicant:
Advanced Semiconductor Engineering, Inc., Kaohsiung, TW;
Inventors:
Po-I Wu, Kaohsiung, TW;
Chen-Chao Wang, Kaohsiung, TW;
Assignee:
ADVANCED SEMICONDUCTOR ENGINEERING, INC., Kaohsiung, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/5286 (2013.01);
Abstract
A semiconductor device includes a dielectric layer, a first conductive layer penetrating the dielectric layer, and a grounding structure disposed within the dielectric layer and adjacent to the first conductive layer. The dielectric layer has a first surface and a second surface opposite the first surface. The first conductive layer has a first portion and a second portion connected to the first portion. The first portion has a width greater than that of the second portion.