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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11222815 B1

PDFFull Text
Date of Patent:
Jan. 11, 2022

Filed:

Nov. 20, 2019

Semiconductor device with reduced via resistance

Applicant:

Tessera, Inc., San Jose, CA (US);

Inventors:

Conal E. Murray, Yorktown Heights, NY (US);

Chih-Chao Yang, Albany, NY (US);

Assignee:

Tessera, Inc., San Jose, CA (US);

Attorney:

Lee & Hayes, P.C.

Primary Examiner:

Shahed Ahmed

Assistant Examiner:

Vicki B Booker

Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); C23F 4/00 (2006.01); C23F 1/44 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C23F 1/44 (2013.01); C23F 4/00 (2013.01); H01L 21/76802 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76829 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76844 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 21/76897 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/5329 (2013.01); H01L 23/53223 (2013.01); H01L 23/53228 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 23/53295 (2013.01); H01L 21/76804 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A semiconductor interconnect structure having a first electrically conductive structure having a plurality of bottom portions; a dielectric capping layer, at least a portion of the dielectric capping layer being in contact with a first bottom portion of the plurality of bottom portions; and a second electrically conductive structure in electrical contact with a second bottom portion of the plurality of bottom portions. A method of forming the interconnect structure is also provided.

Find Patent Forward Citations

Murray, Conal. (2022). Semiconductor device with reduced via resistance (U.S. Patent No. 11222815). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11222815

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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