The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 11, 2022

Filed:

Sep. 29, 2020
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Yung-Chun Li, New Taipei, TW;

Wei-Chen Wang, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 11/56 (2006.01); G06F 12/02 (2006.01); G11C 16/10 (2006.01); G11C 16/16 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G06F 12/0246 (2013.01); G11C 11/5642 (2013.01); G11C 16/10 (2013.01); G06F 2212/2022 (2013.01); G11C 16/16 (2013.01);
Abstract

A data management method for a memory is provided. The memory includes memory pages. Each of the memory pages includes memory cells. A data update command corresponding to a logical address is received. The logical address maps to a physical address of a target memory page before receiving the data update command. First and second reading voltages are applied to obtain at least a first and a second target memory cell to be sanitized in the target memory page of the memory pages, a first programming voltage is applied to change the logical state of the first target memory cell to a logical state with a higher threshold voltage, and a second programming voltage is applied to change the logical state of the second target memory cell to a logical state with a higher threshold voltage. The first programming voltage is different from the second programming voltage.


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