The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
May. 28, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Harry-Hak-Lay Chuang, Hsinchu County, TW;
Jiun-Yu Tsai, Hsinchu, TW;
Sheng-Huang Huang, Hsinchu, TW;
Ming-Che Ku, Hsinchu, TW;
Hung-Cho Wang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method of forming a MRAM device includes forming an interconnect structure spanning a memory region and a peripheral region; forming a MTJ stack over the interconnect structure within the memory region; depositing a dielectric layer over the MTJ stack and spanning the memory region and the peripheral region; removing a first portion of the dielectric layer from the peripheral region, while leaving a second portion of the dielectric layer within the memory region; after removing the first portion of the dielectric layer from the peripheral region, forming a first IMD layer spanning the memory region and the peripheral region; forming a dual damascene structure through the first IMD layer to a metallization pattern of the interconnect structure within the peripheral region; and after forming the dual damascene structure within the peripheral region, forming a top electrode via in contact with a top electrode of the MTJ stack.