The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Apr. 06, 2020
Micron Technology, Inc., Boise, ID (US);
Toshiyasu Fujimoto, Higashihiroshima, JP;
Takashi Sasaki, Higashihiroshima, JP;
Shinobu Terada, Higashihiroshima, JP;
Micron Technology, Inc., Boise, ID (US);
Abstract
A semiconductor memory device includes a memory cell region; a memory mat end region; a memory mat including the memory cell region and the memory mat region; a plurality of first silicon regions arranged in the memory cell region; a second silicon region arranged in the memory mat end region; a first conductive layer provided in the memory cell region and the memory mat end region; and wherein upper surface position of the second silicon region in the memory mat end region is higher than the upper surface position of the first silicon region in the memory cell region; and wherein the upper surface position of the first conductive layer in the memory mat end region is higher than the upper surface position of the first conductive layer in the memory cell region.