The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Jul. 18, 2019
Applicant:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Inventors:
Min Gyu Sung, Essex, MA (US);
Naushad K. Variam, Marblehead, MA (US);
Sony Varghese, Manchester, MA (US);
Johannes Van Meer, Middleton, MA (US);
Jae Young Lee, Bedford, MA (US);
Assignee:
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01); C23C 14/22 (2006.01); H01L 27/092 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823842 (2013.01); C23C 14/221 (2013.01); H01L 21/31116 (2013.01); H01L 21/3213 (2013.01); H01L 27/092 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
Methods herein may include forming a gate dielectric within a set of trenches in a stack of layers. A first work function (WF) metal may be formed atop the gate dielectric, and a capping layer may be formed over the first WF metal using an angled ion implant deposition, the capping layer extending across the trenches.