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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11217456 B1

PDFFull Text
Date of Patent:
Jan. 04, 2022

Filed:

Mar. 26, 2018

Selective etching and controlled atomic layer etching of transition metal oxide films for device fabrication

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

James M. Blackwell, Portland, OR (US);

Scott B. Clendenning, Portland, OR (US);

Cen Tan, Beaverton, OR (US);

Marie Krysak, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Schwabe, Williamson & Wyatt, P.C.

Primary Examiner:

Karen Kusumakar

Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31122 (2013.01); H01L 21/31144 (2013.01); H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Selective etching and controlled atomic layer etching of transition metal oxide films for device fabrication, and the resulting devices, are described. In an example, method of dry etching a film includes forming a transition metal oxide film having a latent pore-forming material therein. The method also includes removing a surface portion of the latent pore-forming material of the transition metal oxide film to form a porous region of the transition metal oxide film. The method also includes removing the porous region of the transition metal oxide film.

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