The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Nov. 06, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Vinayak Veer Vats, San Ramon, CA (US);
Hang Yu, San Jose, CA (US);
Philip Allan Kraus, San Jose, CA (US);
Sanjay G. Kamath, Fremont, CA (US);
William John Durand, San Francisco, CA (US);
Lakmal Charidu Kalutarage, San Jose, CA (US);
Abhijit B. Mallick, Fremont, CA (US);
Changling Li, Sunnyvale, CA (US);
Deenesh Padhi, Santa Clara, CA (US);
Mark Joseph Saly, Milpitas, CA (US);
Thai Cheng Chua, Cupertino, CA (US);
Mihaela A. Balseanu, Santa Clara, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cmor greater, approximately 10 W/cmor greater, or approximately 20 W/cmor greater.