The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2022
Filed:
Aug. 11, 2020
Micron Technology, Inc., Boise, ID (US);
Innocenzo Tortorelli, Cernusco Sul Naviglio, IT;
Agostino Pirovano, Milan, IT;
Andrea Redaelli, Casatenovo, IT;
Fabio Pellizzer, Boise, ID (US);
Hongmei Wang, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for drift mitigation with embedded refresh are described. A memory cell may be written to and read from using write and read voltages, respectively, that are of different polarities. For example, a memory cell may be written to by applying a first write voltage and may be subsequently read from by applying a first read voltage of a first polarity. At least one additional (e.g., a second) read voltage—a setback voltage—of a second polarity may be utilized to return the memory cell to its original state. Thus the setback voltage may mitigate a shift in the voltage distribution of the cell caused by the first read voltage.