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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11211477 B1

PDFFull Text
Date of Patent:
Dec. 28, 2021

Filed:

Sep. 13, 2019

Finfets having epitaxial capping layer on fin and methods for forming the same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Ming-Hua Yu, Hsinchu, TW;

Chih-Pin Tsao, Zhubei, TW;

Hou-Yu Chen, Zhubei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Kevin Parendo

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/3065 (2006.01); H01L 21/324 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 29/32 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 21/02634 (2013.01); H01L 21/26513 (2013.01); H01L 21/3065 (2013.01); H01L 21/324 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/1083 (2013.01); H01L 29/32 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/7831 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01); H01L 29/66545 (2013.01);
Abstract

A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with dopants, and forming a capping layer on a top surface and sidewalls of the semiconductor fin. The method further includes forming a dielectric on the capping layer, and forming a gate electrode on the dielectric.

Find Patent Forward Citations

Yu, Ming-Hua. (2021). Finfets having epitaxial capping layer on fin and methods for forming the same (U.S. Patent No. 11211477). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11211477

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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