The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Mar. 31, 2017
Applicant:
Soitec, Bernin, FR;
Inventors:
Christophe Figuet, Crolles, FR;
Ludovic Ecarnot, Vaulnaveys-le-Haut, FR;
Bich-Yen Nguyen, Austin, TX (US);
Walter Schwarzenbach, Saint Nazaire les Eymes, FR;
Daniel Delprat, Crolles, FR;
Ionut Radu, Crolles, FR;
Assignee:
Soitec, Bernin, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/161 (2006.01); H01L 23/00 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/161 (2013.01); H01L 21/30604 (2013.01); H01L 24/83 (2013.01); H01L 2224/83894 (2013.01);
Abstract
A method for manufacturing a structure comprising a first substrate comprising at least one electronic component likely to be damaged by a temperature higher than 400° C. and a semiconductor layer extending on the first substrate comprises: