The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Sep. 19, 2019
Applicant:
Yangtze Memory Technologies Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
YANGTZE MEMORY TECHNOLOGIES CO., LTD., Wuhan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); G11C 5/02 (2006.01); G11C 5/06 (2006.01); G11C 16/04 (2006.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); G11C 5/02 (2013.01); G11C 5/06 (2013.01); G11C 16/04 (2013.01); H01L 27/11556 (2013.01);
Abstract
Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack, a channel structure, and a slit structure. The memory stack includes interleaved conductive layers and dielectric layers above the substrate. The channel structure extends vertically through the memory stack. The slit structure extends vertically through the memory stack. An upper end of the slit structure is above an upper end of the channel structure.