The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2021
Filed:
Mar. 20, 2020
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Zhi Dong Wang, Shanghai, CN;
Yi Ying Zhang, Shanghai, CN;
Abstract
Fabrication method of a semiconductor device is provided. The method includes forming an etch layer on the substrate, forming a first transitional layer and a first barrier layer on the etch layer, forming first islands on the first transitional layer by patterning the first barrier layer, forming first trenches in the first transitional layer to expose the etch layer, transferring the pattern of the first trenches into the etch layer and removing the first island, forming a second transitional layer and a second barrier layer on the etch layer and the first trenches, forming second islands on the second transitional layer by patterning the second barrier layer, forming second trenches in the second transitional layer to expose the etch layer, and transferring the pattern of the second trenches into the etch layer.