The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Jul. 09, 2015
International Business Machines Corporation, Armonk, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Keith E. Fogel, Hopewell Junction, NY (US);
Nicole S. Munro, Voorheesville, NY (US);
Alexander Reznicek, Troy, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure is provided that includes non-metal semiconductor alloy containing contact structures for field effect transistors (FETs), particularly p-type FETs. Notably, each non-metal semiconductor alloy containing contact structure includes a highly doped epitaxial semiconductor material directly contacting a topmost surface of a source/drain region of the FET, a titanium liner located on the highly doped epitaxial semiconductor material, a diffusion barrier liner located on the titanium liner, and a contact metal portion located on the diffusion barrier liner.