The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 2021
Filed:
Apr. 27, 2018
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Hsin-Yun Hsu, Taoyuan, TW;
Hsiao-Kuan Wei, Longtan Township, Taoyuan County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4941 (2013.01); H01L 29/41791 (2013.01); H01L 29/4975 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first insulating layer over a substrate. A first metal layer is formed in the first insulating layer and over the substrate. A silicon- and fluorine-containing barrier layer is formed between the first insulating layer and the first metal layer and between the substrate and the first metal layer. The silicon- and fluorine-containing barrier layer has a silicon content in a range from about 5% to about 20%.