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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11201152 B1

PDFFull Text
Date of Patent:
Dec. 14, 2021

Filed:

Apr. 20, 2018

Method, apparatus, and system for fin-over-nanosheet complementary field-effect-transistor

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Steven Soss, Cornwall, NY (US);

Steven Bentley, Menands, NY (US);

Daniel Chanemougame, Niskayuna, NY (US);

Julien Frougier, Albany, NY (US);

Bipul Paul, Mechanicville, NY (US);

Lars Liebmann, Mechanicville, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Williams Morgan, P.C.

Primary Examiner:

Kimberly N Rizkallah

Assistant Examiner:

Dilinh P Nguyen

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 21/3065 (2006.01); H01L 21/306 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0924 (2013.01); H01L 21/02532 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 27/0922 (2013.01); H01L 29/0649 (2013.01); H01L 29/0665 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 21/0262 (2013.01); H01L 21/02181 (2013.01); H01L 21/3065 (2013.01); H01L 21/30625 (2013.01); H01L 29/517 (2013.01);
Abstract

A semiconductor device at least one first transistor of a first type disposed above a substrate and comprising a channel wider in one cross-section than tall, wherein the first type is a PFET transistor or an NFET transistor; and at least one second transistor of a second type disposed above the at least one first transistor and comprising a channel taller in the one cross-section than wide, wherein the second type is a PFET transistor or an NFET transistor, and the second type is different from the first type. Methods and systems for forming the semiconductor structure.

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