The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 14, 2021

Filed:

Sep. 14, 2018
Applicant:

Shinkawa Ltd., Tokyo, JP;

Inventors:

Tomonori Nakamura, Tokyo, JP;

Toru Maeda, Tokyo, JP;

Satoru Nagai, Tokyo, JP;

Yoshihiro Saeki, Tokyo, JP;

Osamu Watanabe, Tokyo, JP;

Assignee:

SHINKAWA LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/66 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
H01L 24/83 (2013.01); H01L 24/75 (2013.01); H01L 21/563 (2013.01); H01L 22/20 (2013.01); H01L 22/26 (2013.01); H01L 2224/7592 (2013.01); H01L 2224/75301 (2013.01); H01L 2224/83097 (2013.01); H01L 2224/83201 (2013.01); H01L 2224/83855 (2013.01); H01L 2224/83908 (2013.01);
Abstract

Provided is a method for setting the conditions for heating a semiconductor chip during bonding of the semiconductor chip using an NCF, wherein a heating start temperature and a rate of temperature increase are set on the basis of a viscosity characteristic map that indicates changes in viscosity with respect to temperature of the NCF at various rates of temperature increase and a heating start temperature characteristic map that indicates changes in viscosity with respect to temperature of the NCF when the heating start temperature is changed at the same rate of temperature increase.


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