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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11195931 B1

PDFFull Text
Date of Patent:
Dec. 07, 2021

Filed:

Aug. 17, 2020

Gate structure, semiconductor device and the method of forming semiconductor device

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Chun-Hsiung Tsai, Xinpu Township, TW;

Kuo-Feng Yu, Zhudong Township, TW;

Chien-Tai Chan, Hsinchu, TW;

Ziwei Fang, Hsinchu, TW;

Kei-Wei Chen, Tainan, TW;

Huai-Tei Yang, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

David Vu

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/225 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4966 (2013.01); H01L 21/2254 (2013.01); H01L 29/6659 (2013.01); H01L 29/66492 (2013.01); H01L 29/66545 (2013.01); H01L 29/7833 (2013.01); H01L 29/785 (2013.01);
Abstract

A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a gate stack and a doped spacer overlying a sidewall of the gate stack. The gate stack contains a doped work function metal (WFM) stack and a metal gate electrode overlying the doped WFM stack.

Find Patent Forward Citations

Tsai, Chun-Hsiung. (2021). Gate structure, semiconductor device and the method of forming semiconductor device (U.S. Patent No. 11195931). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11195931

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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