The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Oct. 30, 2019
International Business Machines Corporation, Armonk, NY (US);
Ulvac, Inc., Kanagawa, JP;
Takashi Ando, Tuckahoe, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Masanobu Hatanaka, Susono, JP;
Vijay Narayanan, New York, NY (US);
Yohei Ogawa, White Plains, NY (US);
John Rozen, Hastings on Hudson, NY (US);
International Business Machines Corporation, Armonk, NY (US);
ULVAC, INC., Kanagawa, JP;
Abstract
A gate structure for effective work function adjustments of semiconductor devices that includes a gate dielectric on a channel region of a semiconductor device; a first metal nitride in direct contact with the gate dielectric; a conformal carbide of Aluminum material layer having an aluminum content greater than 30 atomic wt. %; and a second metal nitride layer in direct contact with the conformal aluminum (Al) and carbon (C) containing material layer. The conformal carbide of aluminum (Al) layer includes aluminum carbide, or AlC, yielding an aluminum (Al) content up to 57 atomic % (at. %) and work function setting from 3.9 eV to 5.0 eV at thicknesses below 25 Å. Such structures can present metal gate length scaling and resistance benefit below 25 nm compared to state of the art work function electrodes.