The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Sep. 18, 2020
United Microelectronics Corp., Hsinchu, TW;
Chia-Jung Hsu, Tainan, TW;
Chin-Hung Chen, Tainan, TW;
Chun-Ya Chiu, Tainan, TW;
Chih-Kai Hsu, Tainan, TW;
Ssu-I Fu, Kaohsiung, TW;
Tsai-Yu Wen, Tainan, TW;
Shi You Liu, Kaohsiung, TW;
Yu-Hsiang Lin, New Taipei, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A structure of semiconductor device is provided, including a substrate. A first trench isolation and a second trench isolation are disposed in the substrate. A height of a portion of the substrate is between a top and a bottom of the first and second trench isolations. A gate insulation layer is disposed on the portion of the substrate between the first and second trench isolations. A germanium (Ge) doped layer region is disposed in the portion of the substrate just under the gate insulation layer. A fluorine (F) doped layer region is in the portion of the substrate, lower than and overlapping with the germanium doped layer region.