The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Jan. 10, 2020
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ji Xia, Wuhan, CN;

Wei Xu, Wuhan, CN;

Pan Huang, Wuhan, CN;

Wenxiang Xu, Wuhan, CN;

Beihan Wang, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 27/11582 (2017.01); H01L 23/528 (2006.01); H01L 27/11573 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/7684 (2013.01); H01L 21/76802 (2013.01); H01L 21/76843 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 27/11573 (2013.01);
Abstract

Embodiments of structure and methods for forming a three-dimensional (3D) memory device are provided. In an example, a 3D memory device includes a substrate, a memory stack above the substrate, and a peripheral contact structure outside of the memory stack and in contact with the substrate. The peripheral contact structure includes a first peripheral contact portion in the substrate and having a conductive material different from the substrate. The peripheral contact structure also includes a second peripheral contact above, in contact with, and conductively connected to the first peripheral contact portion.


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