The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Feb. 14, 2020
Applicant:

Disco Corporation, Tokyo, JP;

Inventor:

Kenji Furuta, Tokyo, JP;

Assignee:

DISCO CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/78 (2006.01); B23K 26/08 (2014.01); H01L 21/67 (2006.01); B23K 26/359 (2014.01); H01L 21/304 (2006.01); B23K 26/36 (2014.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); B23K 26/08 (2013.01); B23K 26/359 (2015.10); B23K 26/36 (2013.01); H01L 21/304 (2013.01); H01L 21/67092 (2013.01);
Abstract

A wafer processing method for processing a wafer with devices formed in regions on a side of a front surface of the wafer, the regions being defined by first scheduled division lines and second scheduled division lines includes a first modified layer forming step and a second modified layer forming step. In the first modified layer forming step, a laser beam is irradiated with its focal point set at a height leveled with a height of a first region located inside the wafer on the side of the front surface of the wafer, whereby first modified layers are formed. In the second modified layer forming step, the laser beam is irradiated with its focal point set at a height leveled with a height of a second region located inside the wafer on a side of a back surface of the wafer, whereby second modified layers are formed.


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