The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Aug. 24, 2018
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Moriz Jelinek, Villach, AT;
Michael Brugger, Lieserbruecke, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
Peter Zupan, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/317 (2006.01); H01L 21/265 (2006.01); H01J 37/302 (2006.01); H01J 37/304 (2006.01); H01L 21/04 (2006.01); H01L 29/08 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3171 (2013.01); H01J 37/304 (2013.01); H01J 37/3023 (2013.01); H01L 21/046 (2013.01); H01L 21/265 (2013.01); H01L 21/2654 (2013.01); H01L 21/26506 (2013.01); H01L 21/26513 (2013.01); H01L 21/26546 (2013.01); H01J 2237/047 (2013.01); H01J 2237/30461 (2013.01); H01L 29/083 (2013.01); H01L 29/0878 (2013.01); H01L 29/1608 (2013.01);
Abstract
An ion implantation method includes changing an ion acceleration energy and/or an ion beam current density of an ion beam while effecting a relative movement between a semiconductor substrate and the ion beam impinging on a surface of the semiconductor substrate.