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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11194251 B1

PDFFull Text
Date of Patent:
Dec. 07, 2021

Filed:

May. 11, 2015

Resist underlayer film-forming composition for lithography containing polymer having blocked isocyanate structure

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Ryo Karasawa, Toyama, JP;

Tokio Nishita, Toyama, JP;

Yasunobu Someya, Toyama, JP;

Takafumi Endo, Toyama, JP;

Rikimaru Sakamoto, Toyama, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

John A McPherson

Assistant Examiner:

Nicholas E Brown

Int. Cl.
CPC ...
G03F 7/09 (2006.01); G03F 7/26 (2006.01); G03F 7/11 (2006.01); H01L 21/033 (2006.01); H01L 21/027 (2006.01); C08F 20/36 (2006.01); C08F 20/58 (2006.01); C09D 133/14 (2006.01); C09D 133/26 (2006.01); G03F 7/20 (2006.01); H01L 21/308 (2006.01); G03F 7/16 (2006.01);
U.S. Cl.
CPC ...
G03F 7/094 (2013.01); C08F 20/36 (2013.01); C08F 20/58 (2013.01); C09D 133/14 (2013.01); C09D 133/26 (2013.01); G03F 7/11 (2013.01); G03F 7/162 (2013.01); G03F 7/168 (2013.01); G03F 7/2002 (2013.01); G03F 7/2037 (2013.01); G03F 7/26 (2013.01); H01L 21/0271 (2013.01); H01L 21/0332 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01);
Abstract

A resist underlayer film-forming composition for lithography capable of being dry-etched during pattern transfer from the upper layer or during substrate processing and capable of being removed with an alkaline aqueous solution after the substrate processing. The composition includes a polymer (A) having an acrylamide structure or an acrylic acid ester structure; a polymer (B) having a blocked isocyanate structure; and a solvent (C). The polymer (A) is a polymer including a unit structure of Formula (1). The polymer (B) is a polymer including a unit structure of Formula (2). A method for manufacturing a semiconductor device includes steps for: forming a resist pattern; etching an inorganic hard mask layer with use of the resist pattern; etching a resist underlayer film with use of the pattered inorganic hard mask layer; and processing a semiconductor substrate with use of the pattered resist underlayer film.

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