The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Mar. 27, 2020
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

John Magana, San Jose, CA (US);

Guojing Zhang, Saratoga, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/64 (2012.01);
U.S. Cl.
CPC ...
G03F 1/64 (2013.01);
Abstract

Monolithic framed pellicle membrane integrating a structural framing member with a membrane spanning the framing member. The monolithic frame pellicle membrane is suitable as an overlay of a reticle employed in lithography operations of integrated circuit manufacture. A semiconductor-on-insulator (SOI) wafer may be machined from the backside, for example with a bonnet polisher, to form a pellicle framing member by removing a portion of a base semiconductor substrate of the SOI wafer selectively to top semiconductor layer of the SOI wafer, which is retained as a pellicle membrane. In some exemplary embodiments suitable for extreme ultraviolet (EUV) lithography applications, at least the top semiconductor layer of the SOI wafer is a substantially monocrystalline silicon layer.


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