The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

Nov. 28, 2018
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Koji Maeda, Yamanashi, JP;

Hiroyuki Yokohara, Yamanashi, JP;

Hiroshi Sone, Yamanashi, JP;

Tetsuya Miyashita, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/04 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C23C 14/18 (2006.01);
U.S. Cl.
CPC ...
C23C 14/3464 (2013.01); C23C 14/042 (2013.01); C23C 14/081 (2013.01); C23C 14/185 (2013.01); C23C 14/3414 (2013.01);
Abstract

Disclosed is a PVD processing method including a first process, a second process, a third process, and a fourth process. In the first process, an opening of a shield, which is provided between a first target containing a metal oxide and a second target containing a metal constituting the metal oxide, and a stage on which a substrate as a film formation object is placed, is made to coincide with the first target so as to expose the first target to the stage and the opening is brought close to the first target. In the second process, sputtering is performed using the first target. In the third process, the opening is made to coincide with the second target so as to expose the first target to the stage, and the opening is brought close to the second target. In the fourth process, sputtering is performed using the second target.


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