The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 30, 2021

Filed:

Mar. 13, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chia-Yu Wei, Tainan, TW;

Yu-Ting Kao, Hsinchu, TW;

Yen-Liang Lin, Tainan, TW;

Wen-I Hsu, Tainan, TW;

Hsun-Ying Huang, Tainan, TW;

Kuo-Cheng Lee, Tainan, TW;

Hsin-Chi Chen, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/107 (2006.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/18 (2006.01); H01L 31/02 (2006.01); H01L 31/0232 (2014.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/107 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 31/02005 (2013.01); H01L 31/02161 (2013.01); H01L 31/02164 (2013.01); H01L 31/02327 (2013.01); H01L 31/022408 (2013.01); H01L 31/035272 (2013.01); H01L 31/1804 (2013.01);
Abstract

A photodetector includes: a substrate; a first semiconductor region, the first semiconductor region extending into the substrate from a front side of the substrate; and a second semiconductor region, the second semiconductor region further extending into the substrate from a bottom boundary of the first semiconductor region, wherein when the photodetector operates under a Geiger mode, the second semiconductor region is fully depleted to absorb a radiation source received from a back side of the substrate.


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